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RJK2508DPK_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
ï· Low leakage current
ï· High speed switching
Outline
PRSS0004ZE-A
(Previous code: TO-3P)
D
G
S
Preliminary Datasheet
REJ03G0508-0300
Rev.3.00
Jun 30, 2010
1. Gate
2. Drain (Flange)
3. Source
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
3. STch = 25ï°C, Tch ï£ 150ï°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ï±ch-c
Tch
Tstg
Ratings
250
±30
50
100
50
100
17
18.0
150
0.833
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
Page 1 of 6
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