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| RJK2076DPA_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 200V - 20A - MOS FET High Speed Power Switching | |||
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RJK2076DPA
200V - 20A - MOS FET
High Speed Power Switching
Features
ï· Low on-resistance
RDS(on) = 0.068 ï typ. (at ID = 10 A, VGS = 10 V, Ta = 25ï°C)
ï· Very low gate charge
Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25ï°C)
ï· Low leakage current
ï· High speed switching
Outline
Preliminary Datasheet
R07DS0859EJ0200
Rev.2.00
Jan 08, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 678
5 678
D DDD
4
4 32 1
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
ID Note4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote2
EARNote2
Pch Note3
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. STch = 25ï°C, Tch ï£ 150ï°C
3. Value at Tc = 25ï°C
4. Limited by maximum safe operation area
Ratings
200
±30
20
40
20
40
9
5.4
65
1.93
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0859EJ0200 Rev.2.00
Jan 08, 2013
Page 1 of 6
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