RJK2062JPK_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 200 V - 80 A - N Channel Power MOS FET High Speed Power Switching

RJK2062JPK
200 V - 80 A - N Channel Power MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0488EJ0100
Rev.1.00
Sep 19, 2012
Features
 For Automotive applications
 AEC-Q101 compliant
 Low on-resistance : R_DS(on) = 17 m typ.
 Low input capacitance : Ciss = 6800 pF typ
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
2, 4
D
1G
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10s duty cycle  1%
2. Tch = 25C, Rg  50 
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_DR (pulse) ^Note1
I ^Note2
AP
E ^Note2
AR
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 0.833C/W
S
3
Ratings
200
20
80
160
80
160
40
107
180
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0488EJ0100 Rev.1.00
Sep 19, 2012
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