RJK2017DPP_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK2017DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.036 Ω typ. (at I_D = 22.5 A, V_GS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
Drain current
Drain peak current
V_GSS
I_D ^Note4
I_{D (pulse)} ^Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0416EJ0300
(Previous: REJ03G1797-0200)
Rev.3.00
Jun 07, 2011
D
1. Gate
2. Drain
3. Source
S
Ratings
200
±30
45
135
45
12
9.6
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
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