RJK2009DPM_10 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK2009DPM
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
Preliminary Datasheet
REJ03G0474-0300
Rev.3.00
Jun 30, 2010
D
1. Gate
G
2. Drain
3. Source
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
ch-c
Tch
Tstg
S
Ratings
200
±30
40
160
40
160
40
106
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G0474-0300 Rev.3.00
Jun 30, 2010
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