RJK2006DPJ_09 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0200
Rev.2.00
Nov 19, 2009
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A : PRSS0004AE-B : PRSS0004AE-C
(Package name: LDPAK(L)
LDPAK(S)-(1)
LDPAK(S)-(2) )
D
4
4
4
1
2
3
RJK2006DPJ
1
2
3
RJK2006DPE
1
2
3
1. Gate
2. Drain
G
3. Source
4. Drain
S
RJK2006DPF
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
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