RJK1590DP3-A0 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – High Speed Power Switching

RJK1590DP3-A0
150 V - 1 A - MOS FET
High Speed Power Switching
Features
 Capable of 2.5 V gate drive
 Low drive current
 Low on-resistance
R_{DS (on)} = 1.5  typ. (at V_GS = 4 V)
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
4
G
3
2
1
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
Symbol
VDSS
VGSS
ID
ID (pulse) ^{Note 1}
IDR
Pch
ch-a
Tch
Tstg
Data Sheet
R07DS1255EJ0100
Rev.1.00
Mar 30, 2015
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
150
10
1
4
1
1.04
120
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS1255EJ0100 Rev.1.00
Mar 30, 2015
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