RJK1536DPE Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel Power MOSFET High-Speed Switching Use

RJK1536DPE
N-Channel Power MOSFET
High-Speed Switching Use
Features
• V_DSS : 150 V
• R_DS(on) : 30 mΩ (Max)
• I_D : 50 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
123
1G
S
3
REJ03G1612-0200
Rev.2.00
Mar 11, 2008
1. Gate
2. Drain
3. Source
4. Drain
Application
• Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
2. STch = 25°C, Tch ≤ 150°C, L = 100 µH
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)}
I_DR
I_{DR (pulse)}
I_AP ^Note2
Pch ^Note1
θch-c
Tch
Tstg
Ratings
150
±20
50
100
50
100
25
125
1.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1612-0200 Rev.2.00 Mar 11, 2008
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