RJK1525DPP-M0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 150V - 17A - MOS FET High Speed Power Switching

RJK1525DPP-M0
150V - 17A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.089  typ. (at I_D = 8.5 A, V_GS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D ^Note1
I_D
Note2
(pulse)
I_DR
I_DR
Note2
(pulse)
I_APNote3
E_ARNote3
Pch ^Note4
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by maximum safe operating area
2. PW  10 s, duty cycle  1%
3. STch = 25C, Tch  150C
4. Value at Tc = 25C
Preliminary Datasheet
R07DS0966EJ0100
Rev.1.00
Nov 20, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
150
±30
17
50
17
50
17
21.6
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0966EJ0100 Rev.1.00
Nov 20, 2012
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