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RJK1212DNS_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 120V, 3A, 310m max. Silicon N Channel Power MOS FET Power Switching | |||
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RJK1212DNS
120V, 3A, 310mï max.
Silicon N Channel Power MOS FET
Power Switching
Features
ï· High speed switching
ï· Capable of 4.5 V gate drive
ï· Low drive current
ï· High density mounting
ï· Low on-resistance
RDS(on) = 240 mï typ. (at VGS = 10 V)
ï· Pb-free
ï· Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
Preliminary Datasheet
R07DS0092EJ0400
Rev.4.00
Apr 11, 2013
5 678
D DDD
4
4 321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ï±ch-c Note3
Tch
Tstg
Ratings
120
+12, -5
3
9
3
2
0.34
10
12.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0092EJ0400 Rev.4.00
Apr 11, 2013
Page 1 of 6
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