RJK1206JPD_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 120 V - 30 A - N Channel Power MOS FET High Speed Power Switching

RJK1206JPD
120 V - 30 A - N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : R_DS(on) = 41 mΩ typ.
• Low input capacitance: Ciss = 1600 pF typ
Outline
Preliminary Datasheet
R07DS0690EJ0300
Rev.3.00
May 23, 2013
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
123
1G
S
3
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 3.0°C/W
Value
120
±20
30
120
30
24
49
50
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0690EJ0300 Rev.3.00
May 23, 2013
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