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RJK1206JPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 120 V - 30 A - N Channel Power MOS FET High Speed Power Switching | |||
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RJK1206JPD
120 V - 30 A - N Channel Power MOS FET
High Speed Power Switching
Features
ï· For Automotive application
ï· AEC-Q101 compliant
ï· Low on-resistance : RDS(on) = 42 mï typ.
ï· Low input capacitance: Ciss = 1600 pF typ
Outline
Preliminary Datasheet
R07DS0690EJ0200
Rev.2.00
Sep 19, 2012
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
123
1G
S
3
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW ï£ 10ïs duty cycle ï£ 1%
2. Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
ï· Channel to case thermal impedance ï±ch-c: 3.0ï°C/W
Value
120
ï±20
30
120
30
24
49
50
175
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C
ï°C
R07DS0690EJ0200 Rev.2.00
Sep 19, 2012
Page 1 of 6
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