|
RJK1055DPB_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching | |||
|
RJK1055DPB
100V, 23A, 17mï max.
Silicon N Channel Power MOS FET
Power Switching
Features
ï· High speed switching
ï· Low drive current
ï· Low on-resistance
RDS(on) = 13 mï typ. (at VGS = 10 V)
ï· Pb-free
ï· Halogen-free
ï· High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 234
Preliminary Datasheet
R07DS1058EJ0200
(Previous: REJ03G1887-0100)
Rev.2.00
Apr 11, 2013
5
D
SSS
123
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ï±ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at L=10uH, Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
Ratings
100
ï±20
23
92
23
23
5.3
60
2.08
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS1058EJ0200 Rev.2.00
Apr 11, 2013
Page 1 of 6
|
▷ |