RJK1055DPB Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching

RJK1055DPB
100V, 23A, 17m max.
Silicon N Channel Power MOS FET
Power Switching
Features
 High speed switching
 Low drive current
 Low on-resistance
R_DS(on) = 13 m typ. (at V_GS = 10 V)
 Pb-free
 Halogen-free
 High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 ²³⁴
Preliminary Datasheet
R07DS1058EJ0200
(Previous: REJ03G1887-0100)
Rev.2.00
Apr 11, 2013
5
D
SSS
123
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AS ^{Note 2}
Pch ^Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at L=10uH, Tch = 25C, Rg  50 
3. Tc = 25C
Ratings
100
20
23
92
23
23
5.3
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1058EJ0200 Rev.2.00
Apr 11, 2013
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