RJK1053DPB Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

RJK1053DPB
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0084EJ0102
(Previous: REJ03G1770-0101)
Rev.1.02
Jul 30, 2010
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 10 m typ. (at V_GS = 10 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 ²³⁴
5
D
4
1, 2, 3 Source
G
4
Gate
5
Drain
SSS
123
Application
 Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
ch-C
Tch
Tstg
Ratings
100
20
25
100
25
12.5
15.6
65
1.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V_GS(off)) which characteristics has been improved.
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
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