RJK1028DSP_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching

RJK1028DSP
100V, 3A, 165m max.
Silicon N Channel Power MOS FET
Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 125 m typ. (at V_GS = 10 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
Preliminary Datasheet
R07DS0197EJ0300
Rev.3.00
Apr 11, 2013
5678
DDDD
SSS
123
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
100
Gate to source voltage
V_GSS
+12, -5
Drain current
Drain peak current
I_D
3
I_{D(pulse)Note1}
12
Body-drain diode reverse drain current
I_DR
3
Avalanche current
I_AP ^{Note 2}
2
Avalanche energy
E_AS ^{Note 2}
0.4
Channel dissipation
Pch ^Note3
1.8
Channel to ambient thermal impedance
ch-a ^Note3
70
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0197EJ0300 Rev.3.00
Apr 11, 2013
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