RJK1008DPN Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel Power MOSFET High-Speed Switching Use

RJK1008DPN
N-Channel Power MOSFET
High-Speed Switching Use
Features
• V_DSS : 100 V
• R_DS(on) : 11 mΩ (Max)
• I_D : 80 A
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
4
2, 4
D
123
1G
S
3
REJ03G1627-0100
Rev.1.00
Mar 21, 2008
1. Gate
2. Drain
3. Source
4. Drain
Application
• Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
2. STch = 25°C, Tch ≤ 150°C, L = 100 µH
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)}
I_DR
I_{DR (pulse)}
I_AP ^Note2
Pch ^Note1
θch-c
Tch
Tstg
Ratings
100
±20
80
160
80
160
40
125
1.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1627-0100 Rev.1.00 Mar 21, 2008
Page 1 of 6