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RJK1003DPP-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel MOS FET 100 V, 50 A, 11 m | |||
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RJK1003DPP-E0
N-Channel MOS FET
100 V, 50 A, 11 mï
Features
ï· High speed switching
ï· Low drive current
ï· Low on-resistance RDS(on) = 8.8 mï typ. (at VGS = 10 V)
ï· Package TO-220FP
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at L = 100 ïH , Tch = 25ï°C, Rg ï³ 50ï,
3. Tc = 25ï°C
Preliminary Datasheet
R07DS0627EJ0200
Rev.2.00
Oct 17, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
100
±20
50
150
50
25
63
25
5.0
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0627EJ0200 Rev.2.00
Oct 17, 2012
Page 1 of 6
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