RJK1003DPN-E0_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel MOS FET 100 V, 50 A, 11 m

RJK1003DPN-E0
N-Channel MOS FET
100 V, 50 A, 11 m
Features
 High speed switching
 Low drive current
 Low on-resistance R_DS(on) = 8.8 m typ. (at V_GS = 10 V)
 Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
1G
123
Preliminary Datasheet
R07DS0621EJ0200
Rev.2.00
Aug 24, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D (pulse)} ^Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_AP ^Note2
E_AS ^Note2
Pch ^Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at L = 100 H , Tch = 25C, Rg  50,
3. Tc = 25C
Ratings
100
±20
50
150
50
25
63
125
1.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0621EJ0200 Rev.2.00
Aug 24, 2012
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