RJK1001DPP-E0_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel MOS FET 100 V, 80 A, 5.5 m

RJK1001DPP-E0
N-Channel MOS FET
100 V, 80 A, 5.5 m
Features
 High speed switching
 Low drive current
 Low on-resistance R_DS(on) = 4.4 m typ. (at V_GS = 10 V)
 Package TO-220FP
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D (pulse)} ^Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_AP ^Note2
E_AS ^Note2
Pch ^Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at L = 100 H, Tch = 25C, Rg  50,
3. Tc = 25C
Preliminary Datasheet
R07DS0625EJ0200
Rev.2.00
Oct 17, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
100
±20
80
240
80
40
160
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0625EJ0200 Rev.2.00
Oct 17, 2012
Page 1 of 6