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RJK1001DPN-E0 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N-Channel MOS FET 100 V, 80 A, 5.5 m | |||
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RJK1001DPN-E0
N-Channel MOS FET
100 V, 80 A, 5.5 mï
Features
ï· High speed switching
ï· Low drive current
ï· Low on-resistance RDS(on) = 4.4 mï typ. (at VGS = 10 V)
ï· Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
1G
123
Preliminary Datasheet
R07DS0619EJ0200
Rev.2.00
Aug 24, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at L = 100 ïH, Tch = 25ï°C, Rg ï³ 50ï,
3. Tc = 25ï°C
Ratings
100
±20
80
240
80
40
160
200
0.63
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0619EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6
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