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RJK0653DPB Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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Preliminary Datasheet
RJK0653DPB
Silicon N Channel Power MOS FET
Power Switching
R07DS0078EJ0102
(Previous: REJ03G1760-0101)
Rev.1.02
Jul 30, 2010
Features
ï· High speed switching
ï· Capable of 4.5 V gate drive
ï· Low drive current
ï· High density mounting
ï· Low on-resistance
RDS(on) = 3.8 mï typ. (at VGS = 10 V)
ï· Pb-free
ï· Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4
1, 2, 3 Source
G
4
Gate
5
Drain
SSS
123
Application
ï· Switching Mode Power Supply
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ï±ch-C
Tch
Tstg
Ratings
60
ï±20
45
180
45
22.5
38
65
1.92
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
This product is for the low voltage drive (ï£ 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(VGS(off)) which characteristics has been improved.
R07DS0078EJ0102 Rev.1.02
Jul 30, 2010
Page 1 of 6
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