|
RJK0636JPD_12 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 60 V - 25 A - N Channel Power MOS FET High Speed Power Switching | |||
|
RJK0636JPD
60 V - 25 A - N Channel Power MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200
Rev.2.00
Aug 29, 2012
Features
ï· For Automotive application
ï· AEC-Q101 compliant
ï· Low on-resistance : RDS(on) = 18 mï typ.
ï· Capable of 4.5 V gate drive
ï· Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
4
D
123
1G
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
ï· Channel to case thermal impedance ï±ch-c: 5°C/W
Ratings
60
±20
25
100
25
19
30.9
30
175
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C
ï°C
R07DS0365EJ0200 Rev.2.00
Aug 29, 2012
Page 1 of 6
|
▷ |