RJK0636JPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

RJK0636JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
 For Automotive application
 AEC-Q101 compliant
 Low on-resistance : R_DS(on) = 18 m typ.
 Capable of 4.5 V gate drive
 Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
123
1G
Preliminary Datasheet
R07DS0365EJ0100
Rev.1.00
Aug 24, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Tch = 25C, Rg  50 
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 5°C/W
Ratings
60
±20
25
100
25
19
30.9
30
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C
C
R07DS0365EJ0100 Rev.1.00
Aug 24, 2011
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