RJK0635DSP Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 60V, 3.5A, 98m

RJK0635DSP
60V, 3.5A, 98m max.
N Channel Power MOS FET
Power Switching
Features
 Capable of 2.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
 Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8 ^{7 65}
1 ²³⁴
2
G
78
DD
4
G
S1
MOS1
Preliminary Datasheet
R07DS1345EJ0301
Rev.3.01
Nov.24.2016
56
DD
S3
MOS2
1, 3
Sourc
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
±12
Drain current
Drain peak current
ID
3.5
ID(pulse)Note1
14
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP ^{Note 2}
EAS ^{Note 2}
Pch ^Note3
3.5
3.5
1.05
1.2
Channel dissipation
Pch ^Note4
1.8
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25°C, Rg  50 
3. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
4. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
C
C
R07DS1345EJ0301 Rev.3.01
Nov. 24, 2016
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