RJK0631JPE_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

RJK0631JPE
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : R_DS(on) = 12 mΩ typ.
• Capable of 4.5 V gate drive
• Low input capacitance: Ciss = 1350 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
1G
123
Preliminary Datasheet
R07DS0341EJ0300
Rev.3.00
Jul 24, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 2.5°C/W
Value
60
±20
30
120
30
120
18
27.8
60
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0341EJ0300 Rev.3.00
Jul 24, 2013
Page 1 of 6