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RJK0631JPD_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching | |||
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RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
⢠For Automotive application
⢠Low on-resistance : RDS(on) = 12 mΩ typ.
⢠Capable of 4.5 V gate drive
⢠Low input capacitance: Ciss = 1350 pF typ
⢠AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
1G
123
Preliminary Datasheet
R07DS0252EJ0200
Rev2.00
May 23, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW ⤠10μs duty cycle ⤠1%
2. Tch = 25°C, Rg ⥠50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
⢠Channel to case thermal impedance θch-c: 3.33°C/W
Value
60
±20
30
120
30
120
27
62.5
45
175
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 1 of 6
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