RJK0631JPD Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
 For Automotive application
 Low on-resistance : R_DS(on) = 12 m typ.
 Capable of 4.5 V gate drive
 Low input capacitance: Ciss = 1350 pF typ
 AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
1G
123
Preliminary Datasheet
R07DS0252EJ0100
Rev.1.00
Feb 03, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW  10s duty cycle  1%
2. Tch = 25C, Rg  50 
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_{DR (pulse)} ^Note1
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 3.33C/W
Value
60
20
30
120
30
120
27
62.5
45
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0252EJ0100 Rev.1.00
Feb 03, 2011
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