RJK0630JPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK0630JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : R_DS(on) = 6.2 mΩ typ.
• Capable of 4.5 V gate drive
• Low input capacitance : Ciss = 2100 pF typ.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_DR (pulse) ^Note1
I ^Note2
AP
E ^Note2
AR
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 1.76°C/W
Preliminary Datasheet
R07DS0340EJ0100
Rev.1.00
Apr 18, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
±20
75
300
75
300
35
105
85
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0340EJ0100 Rev.1.00
Apr 18, 2011
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