RJK0629DPK_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use

RJK0629DPK
60V, 85A, 4.5m max.
N Channel Power MOS FET
High-Speed Switching Use
Features
 V_DSS: 60 V
 R_DS(on): 4.5 m (Max)
 I_D: 100 A
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_DR (pulse) ^Note1
I ^Note2
AP
Pch ^Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Tch  150C
2. STch = 25C, Tch  150C, L = 100 H
3. Value at Tc = 25C
Preliminary Datasheet
R07DS1061EJ0200
(Previous: REJ03G1875-0100)
Rev.2.00
Apr 09, 2013
2
D
1. Gate
2. Drain (Flange)
3. Source
S
3
Value
60
20
85
340
85
340
55
100
1.25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS1061EJ0200 Rev.2.00
Apr 09, 2013
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