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RJK0629DPK_13 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use | |||
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RJK0629DPK
60V, 85A, 4.5mï max.
N Channel Power MOS FET
High-Speed Switching Use
Features
ï· VDSS: 60 V
ï· RDS(on): 4.5 mï (Max)
ï· ID: 100 A
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
Pch Note3
Channel to case thermal impedance
ï±ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Tch ï£ 150ï°C
2. STch = 25ï°C, Tch ï£ 150ï°C, L = 100 ïH
3. Value at Tc = 25ï°C
Preliminary Datasheet
R07DS1061EJ0200
(Previous: REJ03G1875-0100)
Rev.2.00
Apr 09, 2013
2
D
1. Gate
2. Drain (Flange)
3. Source
S
3
Value
60
ï±20
85
340
85
340
55
100
1.25
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS1061EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
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