RJK0629DPK Datasheet, PDF (1/7 Pages) Renesas Technology Corp – N Channel Power MOS FET High-Speed Switching Use

RJK0629DPK
N Channel Power MOS FET
High-Speed Switching Use
Features
• V_DSS: 60 V
• R_DS(on): 4.5 mΩ (Max)
• I_D: 100 A
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_DR (pulse) ^Note1
I ^Note2
AP
Pch ^Note3
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Tch ≤ 150°C
2. STch = 25°C, Tch ≤ 150°C, L = 100 μH
3. Value at Tc = 25°C
Preliminary
REJ03G1875-0100
Rev.1.00
Dec 15, 2009
2
D
1. Gate
2. Drain (Flange)
3. Source
S
3
Value
60
±20
85
340
85
340
55
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1875-0100 Rev.1.00 Dec 15, 2009
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