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RJK0629DPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use | |||
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RJK0629DPE
60V, 85A, 4.5m max.
N Channel Power MOS FET
High-Speed Switching Use
Features
ï· VDSS: 60 V
ï· RDS(on): 4.5 mï (Max)
ï· ID: 85 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Tc = 25ï°C, Tch ï£ 150ï°C, L = 100 ïH
3. Value at Tc = 25ï°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
Pch Note3
ï±ch-c
Tch
Tstg
Preliminary Datasheet
R07DS1060EJ0200
(Previous: REJ03G1874-0100)
Rev.2.00
Apr 09, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
ï±20
85
340
85
340
55
100
1.25
150
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
A
W
ï°C/W
ï°C
ï°C
R07DS1060EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
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