RJK0628JPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 60 V - 160 A - N Channel MOS FET High Speed Power Switching

RJK0628JPE
60 V - 160 A - N Channel MOS FET
High Speed Power Switching
Features
 For Automotive application
 AEC-Q101 compliant
 Low on-resistance : R_DS(on) = 2.6 m typ.
 Capable of 4.5 V gate drive
 Low input capacitance : Ciss = 5400 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Tch = 25C, Rg  50 
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I ^Note3
DR
I_DR (pulse) ^Note1
I ^Note2
AP
E ^Note2
AR
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0336EJ0200
Rev.2.00
Aug 29, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
+20 / –5
160
640
160
640
65
362
192
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0336EJ0200 Rev.2.00
Aug 29, 2012
Page 1 of 6