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RJK0454DPB_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 40V, 40A, 4.9m max. Silicon N Channel Power MOS FET Power Switching | |||
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RJK0454DPB
40V, 40A, 4.9mï max.
Silicon N Channel Power MOS FET
Power Switching
Features
ï· High speed switching
ï· Low drive current
ï· Low on-resistance
RDS(on) = 3.9 mï typ. (at VGS = 10 V)
ï· Pb-free
ï· Halogen-free
ï· High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1 234
Preliminary Datasheet
R07DS1049EJ0300
(Previous: REJ03G1877-0200)
Rev.3.00
Apr 09, 2013
5
D
SSS
123
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ï±ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at L=10uH, Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
Ratings
40
ï±20
40
160
40
40
13
55
2.27
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS1049EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6
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