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RJK0406JPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching | |||
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RJK0406JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
ï· For Automotive application
ï· AEC-Q101 compliant
ï· Low on-resistance : RDS(on) = 1.65 mï typ.
ï· High current devices : ID = 160 A
ï· Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
G
123
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
I Note3
D
ID (pulse) Note1
I Note3
DR
IDR (pulse) Note1
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
ï· Channel to case thermal impedance ï±ch-c: 0.781ï°C/W
Preliminary Datasheet
R07DS0335EJ0200
Rev.2.00
Dec 19, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
40
+20 / â5
160
640
160
640
70
653
192
175
â55 to +150
(Ta = 25ï°C)
Unit
V
V
A
A
A
A
A
mJ
W
ï°C
ï°C
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
Page 1 of 6
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