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RJK03N9DNS Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching | |||
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Preliminary Datasheet
RJK03N9DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0790EJ0101
Rev.1.01
May 30, 2012
Features
ï· High speed switching
ï· Capable of 4.5 V gate drive
ï· Low drive current
ï· High density mounting
ï· Low on-resistance
RDS(on) = 5.7 mï typ. (at VGS = 8.0 V)
ï· Pb-free
ï· Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4
4 321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tch = 25ï°C, Rg ï³ 50 ï
3. Tc = 25ï°C
S SS
1 23
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ï±ch-c Note3
Tch
Tstg
Ratings
30
±12
25
100
25
10.5
11
15
8.33
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
ï°C/W
ï°C
ï°C
R07DS0790EJ0101 Rev.1.01
May 30, 2012
Page 1 of 6
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