RJK03N8DNS Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Preliminary Datasheet
RJK03N8DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0789EJ0100
Rev.1.00
Feb 29, 2012
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 4.6 m typ. (at V_GS = 8.0 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4
4 321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AS ^{Note 2}
Pch ^Note3
ch-c ^Note3
Tch
Tstg
Ratings
30
±12
30
120
30
13
16.9
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0789EJ0100 Rev.1.00
Feb 29, 2012
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