RJK03E5DPA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Preliminary Datasheet
RJK03E5DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1929-0210
Rev.2.10
May 20, 2010
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 3.2 m typ. (at V_GS = 8 V)
 Pb-free
 Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5678
5 678
D DDD
4
4321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
ch-c ^Note3
Tch
Tstg
Ratings
30
±12
40
160
40
15
22.5
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1929-0210 Rev.2.10
May 20, 2010
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