RJK03C1DPB_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Preliminary
RJK03C1DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1830-0310
Rev.3.10
Sep 29, 2009
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 1.7 mΩ typ. (at V_GS = 10 V)
• Pb-free
• Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5 678
D DDD
5
4
G
1 ²³⁴
1, 2, 3
4
5
Source
Gate
Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
θch-C
Tch
Tstg
Ratings
30
±20
60
240
60
28
78.4
65
1.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
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