RJK0384DPA Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

RJK0384DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1724-0101
Preliminary
Rev.1.01
Jul 10, 2008
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Pb-free
• Halogen-free
Outline
WPAK
234
D1 D1 D1
9
S1/D2
5 6 78
1
8
G1
G2
9
MOS1
S2 S2 S2
567
MOS2 + SBD
4 321
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc=25°C
MOS1
30
±20
15
60
15
11
12.1
10
150
–55 to +150
Ratings
MOS2
30
±20
42
168
42
18
32.4
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1724-0101 Rev.1.01 Jul 10, 2008
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