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RJK0380DPA Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching | |||
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Preliminary
RJK0380DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1827-0210
Rev.2.10
Sep 29, 2009
Features
⢠High speed switching
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS(on) = 2.4 mΩ typ. (at VGS = 10 V)
⢠Pb-free
⢠Halogen-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
5 678
D DDD
4
4 32 1
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 μs, duty cycle ⤠1%
2. Value at Tch = 25°C, Rg ⥠50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
45
180
45
25
62.5
50
2.5
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
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