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RJK0349DSP Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
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RJK0349DSP
Silicon N Channel Power MOS FET
Power Switching
Features
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS(on) = 2.9 m⦠typ. (at VGS = 10 V)
⢠Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1659-0300
Rev.3.00
Jul 10, 2008
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
20
160
Body-drain diode reverse drain current
IDR
20
Avalanche current
IAP Note 2
20
Avalanche energy
EAR Note 2
40
Channel dissipation
Pch Note3
2.5
Channel to ambient thermal impedance
θch-a Note3
50
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at Tch = 25°C, Rg ⥠50 â¦
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ⤠10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1659-0300 Rev.3.00 Jul 10, 2008
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