RJJ0621DPP Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0621DPP
P Channel Power MOS FET
High Speed Switching
Features
• V_DSS : –60 V
• R_DS(on) : 56 mΩ (MAX)
• I_D : –25 A
• Lead Mount Type (TO-220FN)
Outline
RENESAS Package code: PRSS0003AB-A
(Package name : TO-220FN)
3
12 ₃
1
2
REJ03G1624-0200
Rev.2.00
Jun 16, 2008
1. Gate
2. Drain
3. Source
Application
• DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current (DC)
Drain current (Pulsed)*¹
I_D
I_D(pulse)
Avalanche current
I_AP
Channel dissipation
Channel to case thermal impedance
P_ch
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. Pulse width limited by safe operating area.
Ratings
–60
+10/–20
–25
–50
–25
35
3.57
–55 to +150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
(Tc = 25°C)
Conditions
V_GS = 0 V
V_DS = 0 V
L = 100 µH
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
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