RJJ0621DPP-E0_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0621DPP-E0
P Channel Power MOS FET
High Speed Switching
Features
 V_DSS : –60 V
 R_DS(on) : 56 m (MAX)
 I_D : –25 A
 Lead Mount Type (TO-220FP)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
G1
Preliminary Datasheet
R07DS0797EJ0100
Rev.1.00
Jun 08, 2012
S
3
1. Gate
2. Drain
3. Source
2
D
Application
 DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current (DC)
Drain current (Pulsed)*¹
I_D
I_D(pulse)
Avalanche current
I_AP
Channel dissipation
Channel to case thermal impedance
P_ch
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. Pulse width limited by safe operating area.
Ratings
–60
+10/–20
–25
–50
–25
25
5.0
–55 to +150
–55 to +150
Unit
V
V
A
A
A
W
C/W
°C
°C
(Tc = 25°C)
Conditions
V_GS = 0 V
V_DS = 0 V
L = 100 H
R07DS0797EJ0100 Rev.1.00
Jun 08, 2012
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