RJJ0601JPE Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

RJJ0601JPE
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 8.2 mΩ typ.
• Capable of 4.5 V gate drive
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1
G
123
D
2, 4
3
S
REJ03G1603-0100
Rev.1.00
Nov 21, 2007
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I ^Note3
AP
E ^Note3
AR
Pch^Note2
Tch
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 1.39°C/W
Value
–60
±20
–90
–360
–90
–40
137
90
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1603-0100 Rev.1.00 Nov 21, 2007
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