RJF0619JPD_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 60V, 30A Silicon N Channel Thermal FET Power Switching

Target Specifications Datasheet
RJF0619JPD
60V, 30A Silicon N Channel Thermal FET
Power Switching
R07DS1108EJ0100
Rev.1.00
Sep. 02, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V and 24 V.
• AEC-Q101 Compliant
• Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
G
1
2
3
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
V_GSS
I_D ^Note3
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^{Note 1}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
30
30
6.7
192
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1108EJ0100 Rev.1.00
Sep. 02, 2013
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