RBN75H125S1FP4-A0 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – 1250V - 75A - IGBT

RBN75H125S1FP4-A0
1250V - 75A - IGBT
Application: Uninterruptible Power Supply
Features
 Low collector to emitter saturation voltage
V_CE(sat) = 1.8 V typ. (at I_C = 75 A, V_GE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology (G8H series)
 High speed switching
 Short circuit withstands time (10 s min.)
Outline
RENESAS Package code: TBD
(Package name: TO-247plus)
Preliminary Data Sheet
R07DS1382EJ0004
Rev.0.04
Dec 28, 2016
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
VCES / VR
VGES
IC
IC
IC(peak) ^Note1
IDF
IDF
IDF(peak) ^Note1
PC ^{Note 2}
j-c
1250
30
150
75
(225)
100
50
(225)
(517)
(0.29)
V
V
A
A
A
A
A
A
W
°C/W
Junction to case thermal resistance (Diode)
Junction temperature
j-cd
Tj ^Note2
(0.45)
175
°C/ W
°C
Storage temperature
Tstg
–55 to +150
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1382EJ0004 Rev.0.04
Dec 28, 2016
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