RAJ20660AGNP Datasheet, PDF (1/16 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

Data Sheet
RAJ20660AGNP
Integrated Driver - MOS FET (DrMOS)
R07DS1071EJ0100
Rev.1.00
May 22, 2013
Description
The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET
driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver,
making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch,
eliminating the need for an external SBD for this purpose.
Features
• Compliant with Intel 6 × 6 DrMOS Specification.
• Built-in power MOS FET suitable for Ultrabook, Notebook, Desktop, Server application.
• Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
• Built-in driver circuit which matches the power MOS FET
• Built-in tri-state input function which can support a number of PWM controllers
• High-frequency operation (above 1 MHz) possible
• VIN operating-voltage range: 27 Vmax
• Large average output current (DC Max.25 A / AC Max.40 A)
• Achieve low power dissipation
• Controllable driver: Remote on/off
• Zero current detection for a diode emulation operation
• Double thermal protection: Thermal Warning & Thermal Shutdown
• Built-in bootstrapping Switch
• Small package: QFN40 (6 mm × 6 mm × 0.95 mm)
• Pb-free/Halogen-Free
Outline
THWN
DISBL#
ZCD_EN#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
11
High-side
MOS Pad
MOS FET Driver
VSWH
Low-side MOS Pad
CGND VDRV
GL PGND
31
30
(Bottom view)
20
21
R07DS1071EJ0100 Rev.1.00
May 22, 2013
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