R8A66120FFA Datasheet, PDF (1/15 Pages) Renesas Technology Corp – 4M-bit x 2 MULTIPLE FIELD MEMORY

R8A66120FFA
4M-bit x 2 MULTIPLE FIELD MEMORY
RJJ03FXXXREJ03F0161-0170
Rev.1.70
May.16.2008
Description
R8A66120FFA is high-speed field memory with two FIFO (First In First Out) memories of
4M-bit, which uses high-performance silicon gate process technology.
Features
•Total memory Capacity
8Mega-bit
•High speed operation
cycle time
10.0ns(Min.) fmax = 100MHz
output access time 6.0ns(Max.)
•Output hold time
1.0ns(Min.)
•Supply voltage
3.3 ± 0.3V
•Variable length delay bit
•Synchronous write/read operation
•3 states output
•Package
PLQP0048KB-A (48P6Q-A)
( 48pins 7x7mm body LQFP )
Application
W-CDMA base station, Digital PPC, Digital TV,VTR and so on.
Mode Descriptions
1K-word = 1024-words
1024K-word
4bit bus I/F
4
DA<3:0>
CKA
WRESA
WEA
4
1024K-w
X
4-bit
FIFO
4
DB<3:0>
CKB
WRESB
WEB
4
1024K-w
X
4-bit
FIFO
QA<3:0>
RRESA
REA
QB<3:0>
RRESB
REB
The 2 pieces of 1024K-word x 4-bit
FIFO can be operated completely
independently.
2-system individual input
2-system individual output
Pin Configuration (Top view)
REJ03F0161-0170 Rev.1.70 May.16.2008
page 1 of 14
Outline: PLQP0048KB-A (48P6Q-A)